型号:

IPD70N10S3-12

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 100V 70A TO252-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IPD70N10S3-12 PDF
产品目录绘图 Mosfets TO-252-3-11, TO-252-3
标准包装 1
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 70A
开态Rds(最大)@ Id, Vgs @ 25° C 11.1 毫欧 @ 70A,10V
Id 时的 Vgs(th)(最大) 4V @ 83µA
闸电荷(Qg) @ Vgs 65nC @ 10V
输入电容 (Ciss) @ Vds 4355pF @ 25V
功率 - 最大 125W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 标准包装
产品目录页面 1616 (CN2011-ZH PDF)
其它名称 IPD70N10S3-12DKR
相关参数
ELSD-405SYGWA/S530-E2 Everlight Electronics Co Ltd DISPLAY DUAL DIGIT 0.39" YLW/GRN
IPD70N10S3-12 Infineon Technologies MOSFET N-CH 100V 70A TO252-3
MAN6280 Everlight Electronics Co Ltd LED 7-SEG CC .56" RED RHDP
IPD70N10S3-12 Infineon Technologies MOSFET N-CH 100V 70A TO252-3
MAN6610 Everlight Electronics Co Ltd LED 7-SEG DUAL CA ORN RHDP .56"
BSC160N10NS3 G Infineon Technologies MOSFET N-CH 100V 42A 8TDSON
MAN71A Everlight Electronics Co Ltd LED 7-SEG SGL CA RED RHDP .3"
BSC160N10NS3 G Infineon Technologies MOSFET N-CH 100V 42A 8TDSON
MAN78A Everlight Electronics Co Ltd LED 7-SEG CC RED RHDP 10PIN .3"
ELSS-506SYGWA/S530-E2 Everlight Electronics Co Ltd DISPLAY ALLNGAP SGL DIGIT SMD
BSC160N10NS3 G Infineon Technologies MOSFET N-CH 100V 42A TDSON-8
ELD-526USOWA/S530-A4 Everlight Electronics Co Ltd DISPLAY DUAL DIGIT 0.54" RED-ORN
CWX813-066.6666M Connor-Winfield OSC 66.6666MHZ 3.3V +-25PPM SMD
MAN72A Everlight Electronics Co Ltd LED 7-SEG DISPLAY
CWX813-064.0M Connor-Winfield OSC 64.0000MHZ 3.3V +-25PPM SMD
ELF-511SYGWA/S530-E2 Everlight Electronics Co Ltd DISPLAY QUAD DIGIT ALLNGAP YW-GN
CWX813-064.0M Connor-Winfield OSC 64.0000MHZ 3.3V +-25PPM SMD
ELT-512USOWA/S530-A4 Everlight Electronics Co Ltd DISPLAY TRIPLE DIGIT
ELT-511USOWA/S530-A4 Everlight Electronics Co Ltd DISPLAY TRIPLE DIGIT
CWX813-064.0M Connor-Winfield OSC 64.0000MHZ 3.3V +-25PPM SMD